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IRG4PC40UDPBF Технические параметры

Infineon Technologies  IRG4PC40UDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.15V
Number of Elements 1 Element
Test Conditions 480V, 20A, 10 Ω, 15V
Turn Off Delay Time 110 ns
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1998
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 160W
Current Rating 40A
Element Configuration Single
Power Dissipation 160W
Case Connection COLLECTOR
Input Type Standard
Свойство продукта Значение свойства
Turn On Delay Time 54 ns
Transistor Application POWER CONTROL
Rise Time 57ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-247AC
Turn On Time 92 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 40A
Turn Off Time-Nom (toff) 330 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 54ns/110ns
Switching Energy 710μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 120ns
Height 24.6mm
Length 15.875mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4PC40UDPBF Документы

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