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IRG4PC50KDPBF Технические параметры

Infineon Technologies  IRG4PC50KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.84V
Number of Elements 1 Element
Test Conditions 480V, 30A, 5 Ω, 15V
Turn Off Delay Time 150 ns
Operating Temperature -55°C~150°C TJ
Packaging Tray
Published 1998
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST SOFT RECOVERY
Voltage - Rated DC 600V
Max Power Dissipation 200W
Current Rating 52A
Element Configuration Single
Power Dissipation 104W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 63 ns
Transistor Application POWER CONTROL
Rise Time 49ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 52A
Reverse Recovery Time 50 ns
JEDEC-95 Code TO-247AC
Turn On Time 107 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A
Turn Off Time-Nom (toff) 480 ns
Gate Charge 200nC
Current - Collector Pulsed (Icm) 104A
Td (on/off) @ 25°C 63ns/150ns
Switching Energy 1.61mJ (on), 840μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 20.3mm
Length 15.875mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4PC50KDPBF Документы

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