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IRG4PC50SDPBF Технические параметры

Infineon Technologies  IRG4PC50SDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 52 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.36V
Number of Elements 1 Element
Test Conditions 480V, 41A, 5 Ω, 15V
Turn Off Delay Time 980 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) 250
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 33 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.36V
Max Collector Current 70A
Reverse Recovery Time 50 ns
JEDEC-95 Code TO-247AC
Turn On Time 62 ns
Vce(on) (Max) @ Vge, Ic 1.36V @ 15V, 41A
Turn Off Time-Nom (toff) 1700 ns
Gate Charge 180nC
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 33ns/650ns
Switching Energy 720μJ (on), 8.27mJ (off)
RoHS Status RoHS Compliant
Lead Free Lead Free
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IRG4PC50SDPBF Документы

IRG4PC50SDPBF brand manufacturers: Infineon Technologies, Anli stock, IRG4PC50SDPBF reference price.Infineon Technologies. IRG4PC50SDPBF parameters, IRG4PC50SDPBF Datasheet PDF and pin diagram description download.You can use the IRG4PC50SDPBF Transistors - IGBTs - Single, DSP Datesheet PDF, find IRG4PC50SDPBF pin diagram and circuit diagram and usage method of function,IRG4PC50SDPBF electronics tutorials.You can download from the Anli.