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IRG4PC50UD-EPBF Технические параметры

Infineon Technologies  IRG4PC50UD-EPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Weight 38.000013g
Test Conditions 480V, 27A, 5 Ω, 15V
Collector-Emitter Saturation Voltage 2V
Collector-Emitter Breakdown Voltage 600V
Published 2001
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Voltage - Rated DC 600V
Max Power Dissipation 200W
Current Rating 55A
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 200W
Input Type Standard
Rise Time 25ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 55A
Reverse Recovery Time 50 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 27A
Gate Charge 180nC
Current - Collector Pulsed (Icm) 220A
Td (on/off) @ 25°C 46ns/140ns
Switching Energy 990μJ (on), 590μJ (off)
Width 5.3086mm
Length 15.87mm
Height 20.7mm
RoHS Status RoHS Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free

IRG4PC50UD-EPBF Документы

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