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IRG4PC60UPBF Технические параметры

Infineon Technologies  IRG4PC60UPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2V
Number of Elements 1 Element
Test Conditions 480V, 40A, 5 Ω, 15V
Turn Off Delay Time 200 ns
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 520W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 75A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 520W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 39 ns
Transistor Application POWER CONTROL
Rise Time 42ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 75A
JEDEC-95 Code TO-247AC
Turn On Time 78 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Turn Off Time-Nom (toff) 460 ns
Gate Charge 310nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 39ns/200ns
Switching Energy 280μJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 20.701mm
Length 15.875mm
Width 5.3086mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4PC60UPBF Документы

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