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IRG4PH20KDPBF Технические параметры

Infineon Technologies  IRG4PH20KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 3.17V
Number of Elements 1 Element
Test Conditions 800V, 5A, 50 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1998
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Max Power Dissipation 60W
Current Rating 11A
Element Configuration Single
Power Dissipation 60W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 30ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 4.3V
Max Collector Current 11A
Reverse Recovery Time 51 ns
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 80 ns
Vce(on) (Max) @ Vge, Ic 4.3V @ 15V, 5A
Turn Off Time-Nom (toff) 730 ns
Gate Charge 28nC
Current - Collector Pulsed (Icm) 22A
Td (on/off) @ 25°C 50ns/100ns
Switching Energy 620μJ (on), 300μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4PH20KDPBF Документы

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