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IRG4PH40KDPBF Технические параметры

Infineon Technologies  IRG4PH40KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 3.4V
Number of Elements 1 Element
Test Conditions 800V, 15A, 10 Ω, 15V
Turn Off Delay Time 96 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Max Power Dissipation 160W
Peak Reflow Temperature (Cel) 250
Current Rating 30A
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 160W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 50 ns
Transistor Application MOTOR CONTROL
Rise Time 31ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.4V
Max Collector Current 30A
Reverse Recovery Time 63 ns
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 82 ns
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 15A
Turn Off Time-Nom (toff) 730 ns
Gate Charge 94nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 50ns/96ns
Switching Energy 1.31mJ (on), 1.12mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 3V
Height 20.3mm
Length 15.875mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4PH40KDPBF Документы

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