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Infineon Technologies IRG4PH40UD-EPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 14 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Collector-Emitter Saturation Voltage | 2.43V | |
| Number of Elements | 1 Element | |
| Test Conditions | 800V, 21A, 10 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Bulk | |
| Published | 2004 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Additional Feature | ULTRA FAST SOFT RECOVERY | |
| Voltage - Rated DC | 1.2kV | |
| Max Power Dissipation | 160W | |
| Current Rating | 41A | |
| Element Configuration | Single | |
| Power Dissipation | 160W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Transistor Application | POWER CONTROL | |
| Rise Time | 35ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 3.1V | |
| Max Collector Current | 41A | |
| Reverse Recovery Time | 63 ns | |
| JEDEC-95 Code | TO-247AD | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Turn On Time | 74 ns | |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 21A | |
| Turn Off Time-Nom (toff) | 750 ns | |
| Gate Charge | 86nC | |
| Current - Collector Pulsed (Icm) | 82A | |
| Td (on/off) @ 25°C | 46ns/97ns | |
| Switching Energy | 1.8mJ (on), 1.93mJ (off) | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Width | 5.3086mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |