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IRG4PH40UD-EPBF Технические параметры

Infineon Technologies  IRG4PH40UD-EPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.43V
Number of Elements 1 Element
Test Conditions 800V, 21A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature ULTRA FAST SOFT RECOVERY
Voltage - Rated DC 1.2kV
Max Power Dissipation 160W
Current Rating 41A
Element Configuration Single
Power Dissipation 160W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 35ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.1V
Max Collector Current 41A
Reverse Recovery Time 63 ns
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 74 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 21A
Turn Off Time-Nom (toff) 750 ns
Gate Charge 86nC
Current - Collector Pulsed (Icm) 82A
Td (on/off) @ 25°C 46ns/97ns
Switching Energy 1.8mJ (on), 1.93mJ (off)
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRG4PH40UD-EPBF Документы

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