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IRG4PH50KDPBF Технические параметры

Infineon Technologies  IRG4PH50KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.77V
Number of Elements 1 Element
Test Conditions 800V, 24A, 5 Ω, 15V
Turn Off Delay Time 140 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Max Power Dissipation 200W
Current Rating 45A
Element Configuration Single
Power Dissipation 200W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 87 ns
Transistor Application MOTOR CONTROL
Rise Time 100ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 45A
Reverse Recovery Time 90 ns
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 139 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 24A
Turn Off Time-Nom (toff) 700 ns
Gate Charge 180nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 87ns/140ns
Switching Energy 3.83mJ (on), 1.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 20.3mm
Length 15.875mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4PH50KDPBF Документы

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