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IRG4PH50S-EPBF Технические параметры

Infineon Technologies  IRG4PH50S-EPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 1.7V
Number of Elements 1 Element
Test Conditions 960V, 33A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 200W
Terminal Position SINGLE
Element Configuration Dual
Power Dissipation 200W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 57A
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 62 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 33A
Turn Off Time-Nom (toff) 2170 ns
Gate Charge 167nC
Current - Collector Pulsed (Icm) 114A
Td (on/off) @ 25°C 32ns/845ns
Switching Energy 1.8mJ (on), 19.6mJ (off)
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IRG4PH50S-EPBF Документы

IRG4PH50S-EPBF brand manufacturers: Infineon Technologies, Anli stock, IRG4PH50S-EPBF reference price.Infineon Technologies. IRG4PH50S-EPBF parameters, IRG4PH50S-EPBF Datasheet PDF and pin diagram description download.You can use the IRG4PH50S-EPBF Transistors - IGBTs - Single, DSP Datesheet PDF, find IRG4PH50S-EPBF pin diagram and circuit diagram and usage method of function,IRG4PH50S-EPBF electronics tutorials.You can download from the Anli.