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IRG4PSC71KDPBF Технические параметры

Infineon Technologies  IRG4PSC71KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.83V
Number of Elements 1 Element
Test Conditions 480V, 60A, 5 Ω, 15V
Turn Off Delay Time 282 ns
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1998
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 350W
Свойство продукта Значение свойства
Current Rating 85A
Element Configuration Single
Power Dissipation 350W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 82 ns
Transistor Application MOTOR CONTROL
Rise Time 107ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 85A
Reverse Recovery Time 82 ns
Turn On Time 191 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 60A
Turn Off Time-Nom (toff) 517 ns
Gate Charge 340nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 82ns/282ns
Switching Energy 3.95mJ (on), 2.33mJ (off)
Height 20.8mm
Length 16.0782mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4PSC71KDPBF Документы

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