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Infineon Technologies IRG4PSH71KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 7 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-274AA | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Collector-Emitter Saturation Voltage | 2.97V | |
| Number of Elements | 1 Element | |
| Test Conditions | 800V, 42A, 5 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Bulk | |
| Published | 1999 | |
| JESD-609 Code | e3 | |
| Part Status | Last Time Buy | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | Through Hole | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Voltage - Rated DC | 1.2kV | |
| Max Power Dissipation | 350W | |
| Peak Reflow Temperature (Cel) | 250 | |
| Current Rating | 78A | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 350W | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Transistor Application | MOTOR CONTROL | |
| Rise Time | 84ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 3.9V | |
| Max Collector Current | 78A | |
| Reverse Recovery Time | 107 ns | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Turn On Time | 152 ns | |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 42A | |
| Turn Off Time-Nom (toff) | 660 ns | |
| Gate Charge | 410nC | |
| Current - Collector Pulsed (Icm) | 156A | |
| Td (on/off) @ 25°C | 67ns/230ns | |
| Switching Energy | 5.68mJ (on), 3.23mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 6V | |
| Fall Time-Max (tf) | 190ns | |
| Height | 20.8mm | |
| Length | 16.0782mm | |
| Width | 5.3mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |