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IRG4PSH71UDPBF Технические параметры

Infineon Technologies  IRG4PSH71UDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 11 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.52V
Number of Elements 1 Element
Test Conditions 960V, 70A, 5 Ω, 15V
Turn Off Delay Time 350 ns
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature ULTRA FAST SWITCHING
Voltage - Rated DC 1.2kV
Max Power Dissipation 350W
Current Rating 99A
Element Configuration Single
Power Dissipation 350W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 46 ns
Transistor Application POWER CONTROL
Rise Time 77ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 99A
Reverse Recovery Time 110 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 121 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 70A
Turn Off Time-Nom (toff) 810 ns
Gate Charge 380nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 46ns/250ns
Switching Energy 8.8mJ (on), 9.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 15.24mm
Length 10.5156mm
Width 4.699mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG4PSH71UDPBF Документы

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