Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Infineon Technologies IRG4RC10SDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Number of Elements | 1 Element | |
| Test Conditions | 480V, 8A, 100 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2004 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Voltage - Rated DC | 600V | |
| Max Power Dissipation | 38W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 14A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | IRG4RC10SDPBF |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Single | |
| Power Dissipation | 38W | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Transistor Application | POWER CONTROL | |
| Rise Time | 31ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.8V | |
| Max Collector Current | 14A | |
| Reverse Recovery Time | 28 ns | |
| JEDEC-95 Code | TO-252AA | |
| Turn On Time | 106 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A | |
| Turn Off Time-Nom (toff) | 1780 ns | |
| Gate Charge | 15nC | |
| Current - Collector Pulsed (Icm) | 18A | |
| Td (on/off) @ 25°C | 76ns/815ns | |
| Switching Energy | 310μJ (on), 3.28mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 6V | |
| Fall Time-Max (tf) | 1080ns | |
| Height | 1.2446mm | |
| Length | 6.7056mm | |
| Width | 6.22mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |