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IRG4RC10UTRPBF Технические параметры

Infineon Technologies  IRG4RC10UTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Weight 350.003213mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.6V
Number of Elements 1 Element
Test Conditions 480V, 5A, 100 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Additional Feature ULTRA FAST
Voltage - Rated DC 600V
Max Power Dissipation 38W
Terminal Form GULL WING
Current Rating 8.5A
Base Part Number IRG4RC10UPBF
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 38W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 11ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 8.5A
JEDEC-95 Code TO-252AA
Max Breakdown Voltage 600V
Turn On Time 32 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 5A
Turn Off Time-Nom (toff) 330 ns
Gate Charge 15nC
Current - Collector Pulsed (Icm) 34A
Td (on/off) @ 25°C 19ns/116ns
Switching Energy 80μJ (on), 160μJ (off)
Height 1.2446mm
Length 6.7056mm
Width 6.223mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead

IRG4RC10UTRPBF Документы

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