Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Infineon Technologies IRG6IC30UPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 14 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-220AB Full-Pak | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Current-Collector (Ic) (Max) | 25A | |
| Test Conditions | 400V, 25A, 10Ohm | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2009 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -40°C | |
| Max Power Dissipation | 37W | |
| Element Configuration | Single | |
| Power Dissipation | 37W | |
| Input Type | Standard | |
| Power - Max | 37W | |
| Collector Emitter Voltage (VCEO) | 2.88V | |
| Max Collector Current | 25A | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Vce(on) (Max) @ Vge, Ic | 2.88V @ 15V, 120A | |
| IGBT Type | Trench | |
| Gate Charge | 79nC | |
| Td (on/off) @ 25°C | 20ns/160ns | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |