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IRG7PH30K10DPBF Технические параметры

Infineon Technologies  IRG7PH30K10DPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 9A, 22 Ω, 15V
Turn Off Delay Time 130 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Max Power Dissipation 180W
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
Rise Time-Max 41ns
Element Configuration Single
Power Dissipation 180W
Case Connection COLLECTOR
Свойство продукта Значение свойства
Input Type Standard
Turn On Delay Time 23 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.35V
Max Collector Current 30A
Reverse Recovery Time 140ns
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 34 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 9A
Turn Off Time-Nom (toff) 390 ns
IGBT Type Trench
Gate Charge 45nC
Current - Collector Pulsed (Icm) 27A
Td (on/off) @ 25°C 14ns/110ns
Switching Energy 530μJ (on), 380μJ (off)
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 56ns
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRG7PH30K10DPBF Документы

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