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Infineon Technologies IRG7PH35UD1MPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Surface Mount | NO | |
| Current-Collector (Ic) (Max) | 50A | |
| Test Conditions | 600V, 20A, 10 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2013 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Reach Compliance Code | compliant | |
| Base Part Number | IRG7PH35 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Input Type | Standard | |
| Power - Max | 179W | |
| Polarity/Channel Type | N-CHANNEL | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Power Dissipation-Max (Abs) | 179W | |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A | |
| IGBT Type | Trench | |
| Gate Charge | 130nC | |
| Current - Collector Pulsed (Icm) | 150A | |
| Td (on/off) @ 25°C | -/160ns | |
| Switching Energy | 620μJ (off) | |
| Gate-Emitter Voltage-Max | 30V | |
| Gate-Emitter Thr Voltage-Max | 6V | |
| Fall Time-Max (tf) | 105ns | |
| RoHS Status | RoHS Compliant |