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IRG7PH35UD1PBF Технические параметры

Infineon Technologies  IRG7PH35UD1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 50A
Number of Elements 1 Element
Test Conditions 600V, 20A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
Reach Compliance Code compliant
Base Part Number IRG7PH35
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 179W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Power Dissipation-Max (Abs) 179W
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
Turn Off Time-Nom (toff) 400 ns
IGBT Type Trench
Gate Charge 85nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C -/160ns
Switching Energy 620μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 105ns
RoHS Status RoHS Compliant
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IRG7PH35UD1PBF Документы

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