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IRG7PH35UDPBF Технические параметры

Infineon Technologies  IRG7PH35UDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 1.9V
Number of Elements 1 Element
Test Conditions 600V, 20A, 10 Ω, 15V
Turn Off Delay Time 160 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 180W
Element Configuration Single
Power Dissipation 180W
Case Connection COLLECTOR
Input Type Standard
Свойство продукта Значение свойства
Turn On Delay Time 30 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 50A
Reverse Recovery Time 105 ns
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 45 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
Turn Off Time-Nom (toff) 400 ns
IGBT Type Trench
Gate Charge 85nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 30ns/160ns
Switching Energy 1.06mJ (on), 620μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG7PH35UDPBF Документы

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