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IRG7PH42UD1MPBF Технические параметры

Infineon Technologies  IRG7PH42UD1MPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.500007g
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 1.7V
Test Conditions 600V, 30A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 313W
Свойство продукта Значение свойства
Element Configuration Single
Input Type Standard
Power - Max 313W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 85A
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
IGBT Type Trench
Gate Charge 270nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C -/270ns
Switching Energy 1.21mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRG7PH42UD1MPBF Документы

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