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IRG7PH42UD1PBF Технические параметры

Infineon Technologies  IRG7PH42UD1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 30A, 10 Ω, 15V
Turn Off Delay Time 300 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Max Power Dissipation 313W
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 313W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 85A
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Turn Off Time-Nom (toff) 460 ns
IGBT Type Trench
Gate Charge 180nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C -/270ns
Switching Energy 1.21mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
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IRG7PH42UD1PBF Документы

IRG7PH42UD1PBF brand manufacturers: Infineon Technologies, Anli stock, IRG7PH42UD1PBF reference price.Infineon Technologies. IRG7PH42UD1PBF parameters, IRG7PH42UD1PBF Datasheet PDF and pin diagram description download.You can use the IRG7PH42UD1PBF Transistors - IGBTs - Single, DSP Datesheet PDF, find IRG7PH42UD1PBF pin diagram and circuit diagram and usage method of function,IRG7PH42UD1PBF electronics tutorials.You can download from the Anli.