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IRG7PH42UDPBF Технические параметры

Infineon Technologies  IRG7PH42UDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 30A, 10 Ω, 15V
Turn Off Delay Time 229 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 320W
Rise Time-Max 41ns
Element Configuration Single
Power Dissipation 320W
Case Connection COLLECTOR
Input Type Standard
Свойство продукта Значение свойства
Turn On Delay Time 25 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 85A
Reverse Recovery Time 153 ns
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 51 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Turn Off Time-Nom (toff) 444 ns
IGBT Type Trench
Gate Charge 157nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 25ns/229ns
Switching Energy 2.11mJ (on), 1.18mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 86ns
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRG7PH42UDPBF Документы

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