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IRG7PH46UD-EP Технические параметры

Infineon Technologies  IRG7PH46UD-EP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 40A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 390W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Rise Time-Max 60ns
Свойство продукта Значение свойства
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 390W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 40A
Reverse Recovery Time 140 ns
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 80 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Turn Off Time-Nom (toff) 680 ns
IGBT Type Trench
Gate Charge 220nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 45ns/410ns
Switching Energy 2.61mJ (on), 1.85mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 60ns
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

IRG7PH46UD-EP Документы

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