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IRG7PSH50UDPBF Технические параметры

Infineon Technologies  IRG7PSH50UDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 50A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Max Power Dissipation 462W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSFM-T3
Rise Time-Max 60ns
Свойство продукта Значение свойства
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 462W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 116A
Reverse Recovery Time 190 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 70 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Turn Off Time-Nom (toff) 650 ns
IGBT Type Trench
Gate Charge 440nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 35ns/430ns
Switching Energy 3.6mJ (on), 2.2mJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 65ns
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRG7PSH50UDPBF Документы

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