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Infineon Technologies IRG7PSH50UDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 247Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 1 Element | |
| Test Conditions | 600V, 50A, 5 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2010 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Max Power Dissipation | 462W | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| JESD-30 Code | R-PSFM-T3 | |
| Rise Time-Max | 60ns |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 462W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 2V | |
| Max Collector Current | 116A | |
| Reverse Recovery Time | 190 ns | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Turn On Time | 70 ns | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A | |
| Turn Off Time-Nom (toff) | 650 ns | |
| IGBT Type | Trench | |
| Gate Charge | 440nC | |
| Current - Collector Pulsed (Icm) | 150A | |
| Td (on/off) @ 25°C | 35ns/430ns | |
| Switching Energy | 3.6mJ (on), 2.2mJ (off) | |
| Gate-Emitter Voltage-Max | 30V | |
| Gate-Emitter Thr Voltage-Max | 6V | |
| Fall Time-Max (tf) | 65ns | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |