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IRG7PSH73K10PBF Технические параметры

Infineon Technologies  IRG7PSH73K10PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2V
Number of Elements 1 Element
Test Conditions 600V, 75A, 4.7 Ω, 15V
Turn Off Delay Time 267 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 1.15kW
Element Configuration Single
Power Dissipation 1.15kW
Case Connection COLLECTOR
Свойство продукта Значение свойства
Input Type Standard
Turn On Delay Time 63 ns
Power - Max 1150W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 220A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 172 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
Turn Off Time-Nom (toff) 567 ns
IGBT Type Trench
Gate Charge 360nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 63ns/267ns
Switching Energy 7.7mJ (on), 4.6mJ (off)
Gate-Emitter Thr Voltage-Max 7.5V
Height 20.8mm
Length 16.0782mm
Width 5.5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRG7PSH73K10PBF Документы

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