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IRG7S313UTRLPBF Технические параметры

Infineon Technologies  IRG7S313UTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Supplier Device Package D2PAK
Collector-Emitter Breakdown Voltage 330V
Current-Collector (Ic) (Max) 40A
Test Conditions 196V, 12A, 10Ohm
Packaging Cut Tape (CT)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Max Power Dissipation 78W
Base Part Number IRG7S313UPBF
Свойство продукта Значение свойства
Element Configuration Dual
Power Dissipation 78W
Input Type Standard
Power - Max 78W
Rise Time 13ns
Fall Time (Typ) 68 ns
Collector Emitter Voltage (VCEO) 2.14V
Max Collector Current 40A
Voltage - Collector Emitter Breakdown (Max) 330V
Max Breakdown Voltage 330V
Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 60A
IGBT Type Trench
Gate Charge 33nC
Td (on/off) @ 25°C 1ns/65ns
Height 4.7244mm
Length 16.0782mm
Width 24.3078mm
RoHS Status RoHS Compliant

IRG7S313UTRLPBF Документы

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