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Infineon Technologies IRG8P60N120KD-EPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Weight | 6.500007g | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Current-Collector (Ic) (Max) | 100A | |
| Test Conditions | 600V, 40A, 5 Ω, 15V | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2014 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 420W | |
| Reach Compliance Code | unknown | |
| Element Configuration | Single | |
| Input Type | Standard | |
| Collector Emitter Voltage (VCEO) | 2V | |
| Max Collector Current | 60A | |
| Reverse Recovery Time | 210 ns | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A | |
| Gate Charge | 345nC | |
| Current - Collector Pulsed (Icm) | 120A | |
| Td (on/off) @ 25°C | 40ns/240ns | |
| Switching Energy | 2.8mJ (on), 2.3mJ (off) | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |