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IRGB20B60PD1PBF Технические параметры

Infineon Technologies  IRGB20B60PD1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package TO-220AB
Weight 6.000006g
Collector-Emitter Breakdown Voltage 600V
Current-Collector (Ic) (Max) 40A
Test Conditions 390V, 13A, 10Ohm, 15V
Turn Off Delay Time 115 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Max Power Dissipation 215W
Current Rating 40A
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 215W
Input Type Standard
Turn On Delay Time 20 ns
Power - Max 215W
Rise Time 5ns
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 40A
Reverse Recovery Time 28 ns
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
IGBT Type NPT
Gate Charge 68nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 20ns/115ns
Switching Energy 95μJ (on), 100μJ (off)
Height 8.763mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IRGB20B60PD1PBF Документы

IRGB20B60PD1PBF brand manufacturers: Infineon Technologies, Anli stock, IRGB20B60PD1PBF reference price.Infineon Technologies. IRGB20B60PD1PBF parameters, IRGB20B60PD1PBF Datasheet PDF and pin diagram description download.You can use the IRGB20B60PD1PBF Transistors - IGBTs - Single, DSP Datesheet PDF, find IRGB20B60PD1PBF pin diagram and circuit diagram and usage method of function,IRGB20B60PD1PBF electronics tutorials.You can download from the Anli.