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IRGB4060DPBF Технические параметры

Infineon Technologies  IRGB4060DPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 6.000006g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.95V
Number of Elements 1 Element
Test Conditions 400V, 8A, 47 Ω, 15V
Turn Off Delay Time 106 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Max Power Dissipation 99W
Element Configuration Single
Power Dissipation 99W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 39 ns
Свойство продукта Значение свойства
Transistor Application POWER CONTROL
Rise Time 15ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.85V
Max Collector Current 16A
Reverse Recovery Time 60 ns
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 600V
Turn On Time 45 ns
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 8A
Turn Off Time-Nom (toff) 152 ns
IGBT Type Trench
Gate Charge 19nC
Current - Collector Pulsed (Icm) 32A
Td (on/off) @ 25°C 30ns/95ns
Switching Energy 70μJ (on), 145μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 26ns
Height 9.02mm
Length 10.66mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRGB4060DPBF Документы

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