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IRGB4061DPBF Технические параметры

Infineon Technologies  IRGB4061DPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 6.000006g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.65V
Number of Elements 1 Element
Test Conditions 400V, 18A, 22 Ω, 15V
Turn Off Delay Time 105 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 206W
Element Configuration Single
Power Dissipation 206W
Case Connection COLLECTOR
Input Type Standard
Свойство продукта Значение свойства
Turn On Delay Time 40 ns
Transistor Application POWER CONTROL
Rise Time 25ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.95V
Max Collector Current 36A
Reverse Recovery Time 100 ns
JEDEC-95 Code TO-220AB
Turn On Time 65 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 18A
Turn Off Time-Nom (toff) 160 ns
IGBT Type Trench
Gate Charge 35nC
Current - Collector Pulsed (Icm) 72A
Td (on/off) @ 25°C 40ns/105ns
Switching Energy 95μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 9.02mm
Length 10.66mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRGB4061DPBF Документы

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