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IRGB4064DPBF Технические параметры

Infineon Technologies  IRGB4064DPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 99 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 6.000006g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.6V
Number of Elements 1 Element
Test Conditions 400V, 10A, 22 Ω, 15V
Turn Off Delay Time 79 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Max Power Dissipation 101W
Element Configuration Single
Power Dissipation 101W
Case Connection COLLECTOR
Свойство продукта Значение свойства
Input Type Standard
Turn On Delay Time 27 ns
Transistor Application POWER CONTROL
Rise Time 15ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.91V
Max Collector Current 20A
Reverse Recovery Time 62 ns
JEDEC-95 Code TO-220AB
Turn On Time 43 ns
Vce(on) (Max) @ Vge, Ic 1.91V @ 15V, 10A
Turn Off Time-Nom (toff) 131 ns
IGBT Type Trench
Gate Charge 21nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 27ns/79ns
Switching Energy 29μJ (on), 200μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Height 9.02mm
Length 10.66mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRGB4064DPBF Документы

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