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IRGB4B60KPBF Технические параметры

Infineon Technologies  IRGB4B60KPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 11 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 4A, 100 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 63W
Current Rating 12A
Element Configuration Single
Power Dissipation 63W
Case Connection COLLECTOR
Свойство продукта Значение свойства
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 18ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 12A
JEDEC-95 Code TO-220AB
Turn On Time 40 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
Turn Off Time-Nom (toff) 199 ns
IGBT Type NPT
Gate Charge 12nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 22ns/100ns
Switching Energy 130μJ (on), 83μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 89ns
Height 15.24mm
Length 10.5156mm
Width 4.699mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IRGB4B60KPBF Документы

IRGB4B60KPBF brand manufacturers: Infineon Technologies, Anli stock, IRGB4B60KPBF reference price.Infineon Technologies. IRGB4B60KPBF parameters, IRGB4B60KPBF Datasheet PDF and pin diagram description download.You can use the IRGB4B60KPBF Transistors - IGBTs - Single, DSP Datesheet PDF, find IRGB4B60KPBF pin diagram and circuit diagram and usage method of function,IRGB4B60KPBF electronics tutorials.You can download from the Anli.