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IRGB5B120KDPBF Технические параметры

Infineon Technologies  IRGB5B120KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package TO-220AB
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2V
Current-Collector (Ic) (Max) 12A
Test Conditions 600V, 6A, 50Ohm, 15V
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 1.2kV
Max Power Dissipation 89W
Current Rating 12A
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 89W
Input Type Standard
Turn On Delay Time 22 ns
Power - Max 89W
Rise Time 19ns
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 12A
Reverse Recovery Time 160 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 6A
IGBT Type NPT
Gate Charge 25nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 22ns/100ns
Switching Energy 390μJ (on), 330μJ (off)
Height 15.24mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRGB5B120KDPBF Документы

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