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Infineon Technologies IRGB5B120KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-220AB | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Collector-Emitter Saturation Voltage | 2V | |
| Current-Collector (Ic) (Max) | 12A | |
| Test Conditions | 600V, 6A, 50Ohm, 15V | |
| Turn Off Delay Time | 100 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2004 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 1.2kV | |
| Max Power Dissipation | 89W | |
| Current Rating | 12A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 89W | |
| Input Type | Standard | |
| Turn On Delay Time | 22 ns | |
| Power - Max | 89W | |
| Rise Time | 19ns | |
| Collector Emitter Voltage (VCEO) | 3V | |
| Max Collector Current | 12A | |
| Reverse Recovery Time | 160 ns | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 6A | |
| IGBT Type | NPT | |
| Gate Charge | 25nC | |
| Current - Collector Pulsed (Icm) | 24A | |
| Td (on/off) @ 25°C | 22ns/100ns | |
| Switching Energy | 390μJ (on), 330μJ (off) | |
| Height | 15.24mm | |
| Length | 10.5156mm | |
| Width | 4.69mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |