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IRGB8B60KPBF Технические параметры

Infineon Technologies  IRGB8B60KPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 5A, 100 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 167W
Current Rating 28A
Element Configuration Single
Power Dissipation 167W
Case Connection COLLECTOR
Свойство продукта Значение свойства
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 21ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 28A
JEDEC-95 Code TO-220AB
Turn On Time 43 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 8A
Turn Off Time-Nom (toff) 220 ns
IGBT Type NPT
Gate Charge 18.2nC
Current - Collector Pulsed (Icm) 26A
Td (on/off) @ 25°C 23ns/140ns
Switching Energy 160μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 56ns
Height 8.77mm
Length 10.54mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IRGB8B60KPBF Документы

IRGB8B60KPBF brand manufacturers: Infineon Technologies, Anli stock, IRGB8B60KPBF reference price.Infineon Technologies. IRGB8B60KPBF parameters, IRGB8B60KPBF Datasheet PDF and pin diagram description download.You can use the IRGB8B60KPBF Transistors - IGBTs - Single, DSP Datesheet PDF, find IRGB8B60KPBF pin diagram and circuit diagram and usage method of function,IRGB8B60KPBF electronics tutorials.You can download from the Anli.