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IRGIB10B60KD1P Технические параметры

Infineon Technologies  IRGIB10B60KD1P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Weight 2.299997g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 10A, 50 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 44W
Current Rating 16A
Element Configuration Single
Свойство продукта Значение свойства
Case Connection ISOLATED
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 24ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 16A
Reverse Recovery Time 79 ns
JEDEC-95 Code TO-220AB
Turn On Time 46 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A
Turn Off Time-Nom (toff) 288 ns
IGBT Type NPT
Gate Charge 41nC
Current - Collector Pulsed (Icm) 32A
Td (on/off) @ 25°C 25ns/180ns
Switching Energy 156μJ (on), 165μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 87ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IRGIB10B60KD1P Документы

IRGIB10B60KD1P brand manufacturers: Infineon Technologies, Anli stock, IRGIB10B60KD1P reference price.Infineon Technologies. IRGIB10B60KD1P parameters, IRGIB10B60KD1P Datasheet PDF and pin diagram description download.You can use the IRGIB10B60KD1P Transistors - IGBTs - Single, DSP Datesheet PDF, find IRGIB10B60KD1P pin diagram and circuit diagram and usage method of function,IRGIB10B60KD1P electronics tutorials.You can download from the Anli.