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IRGIB7B60KDPBF Технические параметры

Infineon Technologies  IRGIB7B60KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 8A, 50 Ω, 15V
Turn Off Delay Time 140 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 39W
Current Rating 12A
Element Configuration Single
Power Dissipation 39W
Case Connection ISOLATED
Input Type Standard
Свойство продукта Значение свойства
Turn On Delay Time 23 ns
Transistor Application MOTOR CONTROL
Rise Time 22ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 12A
Reverse Recovery Time 95 ns
JEDEC-95 Code TO-220AB
Turn On Time 43 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 8A
Turn Off Time-Nom (toff) 220 ns
IGBT Type NPT
Gate Charge 29nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 23ns/140ns
Switching Energy 160μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 56ns
Height 16.12mm
Length 10.6172mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRGIB7B60KDPBF Документы

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