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IRGP20B120U-EP Технические параметры

Infineon Technologies  IRGP20B120U-EP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 3.05V
Number of Elements 1 Element
Test Conditions 600V, 20A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 1.2kV
Max Power Dissipation 300W
Current Rating 40A
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 300W
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 30ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 4.85V
Max Collector Current 40A
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 70 ns
Vce(on) (Max) @ Vge, Ic 4.85V @ 15V, 40A
Turn Off Time-Nom (toff) 228 ns
IGBT Type NPT
Gate Charge 169nC
Current - Collector Pulsed (Icm) 120A
Switching Energy 850μJ (on), 425μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
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IRGP20B120U-EP Документы

IRGP20B120U-EP brand manufacturers: Infineon Technologies, Anli stock, IRGP20B120U-EP reference price.Infineon Technologies. IRGP20B120U-EP parameters, IRGP20B120U-EP Datasheet PDF and pin diagram description download.You can use the IRGP20B120U-EP Transistors - IGBTs - Single, DSP Datesheet PDF, find IRGP20B120U-EP pin diagram and circuit diagram and usage method of function,IRGP20B120U-EP electronics tutorials.You can download from the Anli.