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IRGP30B120KD-EP Технические параметры

Infineon Technologies  IRGP30B120KD-EP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Supplier Device Package TO-247AD
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.28V
Current-Collector (Ic) (Max) 60A
Test Conditions 600V, 25A, 5Ohm, 15V
Turn Off Delay Time 210 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 1.2kV
Max Power Dissipation 300W
Current Rating 60A
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 300W
Input Type Standard
Turn On Delay Time 50 ns
Power - Max 300W
Rise Time 25ns
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 60A
Reverse Recovery Time 300 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 60A
IGBT Type NPT
Gate Charge 169nC
Current - Collector Pulsed (Icm) 120A
Switching Energy 1.07mJ (on), 1.49mJ (off)
Height 18.7mm
Length 15.6972mm
Width 5.1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
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IRGP30B120KD-EP Документы

IRGP30B120KD-EP brand manufacturers: Infineon Technologies, Anli stock, IRGP30B120KD-EP reference price.Infineon Technologies. IRGP30B120KD-EP parameters, IRGP30B120KD-EP Datasheet PDF and pin diagram description download.You can use the IRGP30B120KD-EP Transistors - IGBTs - Single, DSP Datesheet PDF, find IRGP30B120KD-EP pin diagram and circuit diagram and usage method of function,IRGP30B120KD-EP electronics tutorials.You can download from the Anli.