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IRGP4063D1-EPBF Технические параметры

Infineon Technologies  IRGP4063D1-EPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 600V
Test Conditions 400V, 48A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 330W
Base Part Number IRGP4063D
Element Configuration Single
Input Type Standard
Свойство продукта Значение свойства
Power - Max 330W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.14V
Max Collector Current 100A
Reverse Recovery Time 80 ns
Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 48A
Gate Charge 150nC
Current - Collector Pulsed (Icm) 192A
Td (on/off) @ 25°C 60ns/160ns
Switching Energy 1.4mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 20.7mm
Length 15.87mm
Width 5.13mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRGP4063D1-EPBF Документы

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