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Infineon Technologies IRGP4066D-EPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 26 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Weight | 6.500007g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Number of Elements | 1 Element | |
| Test Conditions | 400V, 75A, 10 Ω, 15V | |
| Turn Off Delay Time | 200 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Published | 2004 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 454W | |
| Rise Time-Max | 90ns | |
| Element Configuration | Single | |
| Case Connection | COLLECTOR | |
| Input Type | Standard |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Turn On Delay Time | 50 ns | |
| Power - Max | 454W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 2.1V | |
| Max Collector Current | 140A | |
| Reverse Recovery Time | 155 ns | |
| JEDEC-95 Code | TO-247AD | |
| Turn On Time | 120 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A | |
| Turn Off Time-Nom (toff) | 310 ns | |
| IGBT Type | Trench | |
| Gate Charge | 150nC | |
| Current - Collector Pulsed (Icm) | 225A | |
| Td (on/off) @ 25°C | 50ns/200ns | |
| Switching Energy | 2.47mJ (on), 2.16mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 6.5V | |
| Fall Time-Max (tf) | 80ns | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Width | 5.13mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |