Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Infineon Technologies IRGP4266DPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 14 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Collector-Emitter Saturation Voltage | 1.7V | |
| Test Conditions | 400V, 75A, 10 Ω, 15V | |
| Operating Temperature | -40°C~175°C TJ | |
| Packaging | Tube | |
| Published | 2007 | |
| Part Status | Last Time Buy | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 455W | |
| Rise Time-Max | 90ns |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 455W | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 2.1V | |
| Max Collector Current | 140A | |
| Reverse Recovery Time | 170 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A | |
| Gate Charge | 210nC | |
| Current - Collector Pulsed (Icm) | 300A | |
| Td (on/off) @ 25°C | 50ns/200ns | |
| Switching Energy | 2.5mJ (on), 2.2mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 7.7V | |
| Fall Time-Max (tf) | 80ns | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |