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IRGP4750DPBF Технические параметры

Infineon Technologies  IRGP4750DPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 650V
Collector-Emitter Saturation Voltage 1.7V
Test Conditions 400V, 35A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 273W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 273W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 70A
Reverse Recovery Time 150 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A
Gate Charge 105nC
Current - Collector Pulsed (Icm) 105A
Td (on/off) @ 25°C 50ns/105ns
Switching Energy 1.3mJ (on), 500μJ (off)
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Просмотр сходства

IRGP4750DPBF Документы

IRGP4750DPBF brand manufacturers: Infineon Technologies, Anli stock, IRGP4750DPBF reference price.Infineon Technologies. IRGP4750DPBF parameters, IRGP4750DPBF Datasheet PDF and pin diagram description download.You can use the IRGP4750DPBF Transistors - IGBTs - Single, DSP Datesheet PDF, find IRGP4750DPBF pin diagram and circuit diagram and usage method of function,IRGP4750DPBF electronics tutorials.You can download from the Anli.