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IRGP6630DPBF Технические параметры

Infineon Technologies  IRGP6630DPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.65V
Test Conditions 400V, 18A, 22 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 192W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 192W
Collector Emitter Voltage (VCEO) 1.95V
Max Collector Current 47A
Reverse Recovery Time 70 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 18A
Gate Charge 30nC
Current - Collector Pulsed (Icm) 54A
Td (on/off) @ 25°C 40ns/95ns
Switching Energy 75μJ (on), 350μJ (off)
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Просмотр сходства

IRGP6630DPBF Документы

IRGP6630DPBF brand manufacturers: Infineon Technologies, Anli stock, IRGP6630DPBF reference price.Infineon Technologies. IRGP6630DPBF parameters, IRGP6630DPBF Datasheet PDF and pin diagram description download.You can use the IRGP6630DPBF Transistors - IGBTs - Single, DSP Datesheet PDF, find IRGP6630DPBF pin diagram and circuit diagram and usage method of function,IRGP6630DPBF electronics tutorials.You can download from the Anli.