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IRGPS40B120UPBF Технические параметры

Infineon Technologies  IRGPS40B120UPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 3.5V
Number of Elements 1 Element
Test Conditions 600V, 40A, 4.7 Ω, 15V
Turn Off Delay Time 332 ns
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
Voltage - Rated DC 1.2kV
Max Power Dissipation 595W
Current Rating 80A
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 595W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 76 ns
Transistor Application MOTOR CONTROL
Rise Time 25ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.71V
Max Collector Current 80A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 115 ns
Vce(on) (Max) @ Vge, Ic 3.71V @ 15V, 50A
Turn Off Time-Nom (toff) 357 ns
IGBT Type NPT
Gate Charge 340nC
Current - Collector Pulsed (Icm) 160A
Switching Energy 1.4mJ (on), 1.65mJ (off)
Height 20.3mm
Length 15.6mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRGPS40B120UPBF Документы

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