Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IRGPS60B120KDP Технические параметры
Infineon Technologies IRGPS60B120KDP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 13 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-274AA | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 1 Element | |
| Test Conditions | 600V, 15A, 4.7 Ω, 15V | |
| Turn Off Delay Time | 366 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2004 | |
| Part Status | Last Time Buy | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | 1.2kV | |
| Max Power Dissipation | 595W | |
| Current Rating | 105A | |
| Element Configuration | Single | |
| Power Dissipation | 595W | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Turn On Delay Time | 72 ns |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Transistor Application | MOTOR CONTROL | |
| Rise Time | 32ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 105A | |
| Reverse Recovery Time | 180 ns | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Turn On Time | 104 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.75V @ 15V, 60A | |
| Max Junction Temperature (Tj) | 150°C | |
| Continuous Collector Current | 105A | |
| Turn Off Time-Nom (toff) | 411 ns | |
| IGBT Type | NPT | |
| Gate Charge | 340nC | |
| Current - Collector Pulsed (Icm) | 240A | |
| Switching Energy | 3.21mJ (on), 4.78mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 6V | |
| Fall Time-Max (tf) | 58ns | |
| Height | 25.05mm | |
| Length | 16.1mm | |
| Width | 5.5mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ