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IRGPS66160DPBF Технические параметры

Infineon Technologies  IRGPS66160DPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 19 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 247Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.65V
Number of Elements 1 Element
Test Conditions 400V, 120A, 4.7 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 750W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
JESD-30 Code R-PSIP-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 750W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.95V
Max Collector Current 240A
Reverse Recovery Time 95 ns
Turn On Time 210 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 120A
Turn Off Time-Nom (toff) 350 ns
Gate Charge 220nC
Current - Collector Pulsed (Icm) 360A
Td (on/off) @ 25°C 80ns/190ns
Switching Energy 4.47mJ (on), 3.43mJ (off)
Height 20.8mm
Length 16.1mm
Width 5.5mm
RoHS Status RoHS Compliant
Lead Free Lead Free
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IRGPS66160DPBF Документы

IRGPS66160DPBF brand manufacturers: Infineon Technologies, Anli stock, IRGPS66160DPBF reference price.Infineon Technologies. IRGPS66160DPBF parameters, IRGPS66160DPBF Datasheet PDF and pin diagram description download.You can use the IRGPS66160DPBF Transistors - IGBTs - Single, DSP Datesheet PDF, find IRGPS66160DPBF pin diagram and circuit diagram and usage method of function,IRGPS66160DPBF electronics tutorials.You can download from the Anli.