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IRGR3B60KD2TRP Технические параметры

Infineon Technologies  IRGR3B60KD2TRP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 3A, 100 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 52W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRGR3B60KD2PBF
JESD-30 Code R-PSSO-G2
Свойство продукта Значение свойства
Rise Time-Max 22ns
Element Configuration Single
Power Dissipation 52W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 7.8A
Reverse Recovery Time 77 ns
JEDEC-95 Code TO-252AA
Max Breakdown Voltage 600V
Turn On Time 35 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 3A
Turn Off Time-Nom (toff) 211 ns
IGBT Type NPT
Gate Charge 13nC
Current - Collector Pulsed (Icm) 15.6A
Td (on/off) @ 25°C 18ns/110ns
Switching Energy 62μJ (on), 39μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 105ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRGR3B60KD2TRP Документы

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