[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

IRGS10B60KDPBF Технические параметры

Infineon Technologies  IRGS10B60KDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.8V
Number of Elements 1 Element
Test Conditions 400V, 10A, 47 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 600V
Max Power Dissipation 156W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 22A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRGS10B60KDPBF
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 156W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 20ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 22A
Reverse Recovery Time 90 ns
Turn On Time 50 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A
Turn Off Time-Nom (toff) 276 ns
IGBT Type NPT
Gate Charge 38nC
Current - Collector Pulsed (Icm) 44A
Td (on/off) @ 25°C 30ns/230ns
Switching Energy 140μJ (on), 250μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Height 4.699mm
Length 10.668mm
Width 9.652mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Просмотр сходства

IRGS10B60KDPBF Документы

IRGS10B60KDPBF brand manufacturers: Infineon Technologies, Anli stock, IRGS10B60KDPBF reference price.Infineon Technologies. IRGS10B60KDPBF parameters, IRGS10B60KDPBF Datasheet PDF and pin diagram description download.You can use the IRGS10B60KDPBF Transistors - IGBTs - Single, DSP Datesheet PDF, find IRGS10B60KDPBF pin diagram and circuit diagram and usage method of function,IRGS10B60KDPBF electronics tutorials.You can download from the Anli.