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IRGS6B60KPBF Технические параметры

Infineon Technologies  IRGS6B60KPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.8V
Number of Elements 1 Element
Test Conditions 400V, 5A, 100 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 90W
Terminal Form GULL WING
Current Rating 13A
Base Part Number IRGS6B60KPBF
JESD-30 Code R-PSSO-G2
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 90W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 17ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 13A
Turn On Time 45 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 5A
Turn Off Time-Nom (toff) 258 ns
IGBT Type NPT
Gate Charge 18.2nC
Current - Collector Pulsed (Icm) 26A
Td (on/off) @ 25°C 25ns/215ns
Switching Energy 110μJ (on), 135μJ (off)
Height 4.703mm
Length 10.67mm
Width 9.652mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IRGS6B60KPBF Документы

IRGS6B60KPBF brand manufacturers: Infineon Technologies, Anli stock, IRGS6B60KPBF reference price.Infineon Technologies. IRGS6B60KPBF parameters, IRGS6B60KPBF Datasheet PDF and pin diagram description download.You can use the IRGS6B60KPBF Transistors - IGBTs - Single, DSP Datesheet PDF, find IRGS6B60KPBF pin diagram and circuit diagram and usage method of function,IRGS6B60KPBF electronics tutorials.You can download from the Anli.